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Sato, Yuki; Murakami, Hiroyuki*; Shimaoka, Takehiro*; Tsubota, Masakatsu*; Kaneko, Junichi*
Nuclear Instruments and Methods in Physics Research A, 834, p.218 - 222, 2016/10
Times Cited Count:3 Percentile:28.09(Instruments & Instrumentation)Sato, Yuki; Murakami, Hiroyuki*; Shimaoka, Takehiro*; Tsubota, Masakatsu*; Kaneko, Junichi*
Japanese Journal of Applied Physics, 55(4), p.046401_1 - 046401_5, 2016/04
Times Cited Count:4 Percentile:19.82(Physics, Applied)We investigated the performance of a charged particle detector fabricated using single-crystal diamond grown by chemical vapor deposition. The detector was able to identify four different Am -particle energies (5.389, 5.443, 5.486, and 5.545 MeV) because of its superior intrinsic energy resolution of 0.4% (full width at half maximum). The charge collection efficiency inside the diamond crystal was 98% for both electrons and holes. The diamond detector also exhibited no significant degradation in terms of pulse height spectra and energy resolution during operation for more than 100 h in the case of mainly electron drift inside the diamond crystal. In contrast, the shapes of the pulse height spectra measured under hole drift condition deteriorated due to the polarization phenomenon.
Pastuovi, *; Capan, I.*; Cohen, D.*; Forneris, J.*; Iwamoto, Naoya*; Oshima, Takeshi; Siegele, R.*; Hoshino, Norihiro*; Tsuchida, Hidekazu*
Nuclear Instruments and Methods in Physics Research B, 348, p.233 - 239, 2015/04
Times Cited Count:7 Percentile:51.03(Instruments & Instrumentation)Oshima, Takeshi; Sato, Takahiro; Oikawa, Masakazu*; Onoda, Shinobu; Hirao, Toshio; Ito, Hisayoshi
Materials Science Forum, 527-529, p.1347 - 1350, 2006/00
Charge induced in 6H-SiC pn diodes by oxygen ion microbeams was examined in an energy range between 6 and 18 MeV. To minimize the influence of damage, single ion hit Transient Ion Beam Induced Current (TIBIC) measurement system, in which the transient current induced by single ion incidence can be measured, was used in this study. The value of charge increases with increasing reverse applied bias, and the saturation of charge is observed when the depletion layer becomes longer than ion range. An increase of collected charge by the funneling effect (the generation of a transient electric filed) is observed in the case of the depletion layer shorter than ion range. The charge collection efficiency is estimated to be 100 % in the saturation region (the depletion layer longer than ion range). It strongly suggests that high quality particle detectors are fabricated using SiC.
Oshima, Takeshi; Sato, Takahiro; Oikawa, Masakazu*; Yamakawa, Takeshi; Onoda, Shinobu; Wakasa, Takeshi; Laird, J. S.; Hirao, Toshio; Kamiya, Tomihiro; Ito, Hisayoshi; et al.
Nuclear Instruments and Methods in Physics Research A, 541(1-2), p.236 - 240, 2005/04
Times Cited Count:9 Percentile:55.92(Instruments & Instrumentation)In order to develop particle detectors based on SiC semiconductor, SiC pn-diodes were irradiated with microbeam of 15MeV oxygen ions. The transient current was measured using the single ion hit transient ion beam induced current (TIBIC) system at TIARA. As the results, peak intensity of transient current induded by ion irradiation increased and falltime decreased with increasing applied bias. By the integration of transient current, the charge collection was estimated. It was found that charges generated in deeper region beyond the depletion layer can be collected by the funneling effect.
Kinoshita, Akimasa*; Iwami, Motohiro*; Kobayashi, Kenichi*; Nakano, Itsuo*; Tanaka, Reisaburo*; Kamiya, Tomihiro; Oi, Akihiko; Oshima, Takeshi; Fukushima, Yasutaka*
Nuclear Instruments and Methods in Physics Research A, 541(1-2), p.213 - 220, 2005/04
Times Cited Count:27 Percentile:84.77(Instruments & Instrumentation)no abstracts in English
Laird, J. S.; Hirao, Toshio; Onoda, Shinobu; Wakasa, Takeshi; Yamakawa, Takeshi; Abe, Hiroshi; Oyama, Hidenori*; Kamiya, Tomihiro
JAERI-Review 2004-025, TIARA Annual Report 2003, p.14 - 16, 2004/11
no abstracts in English
Oshima, Takeshi; Sato, Takahiro; Oikawa, Masakazu*; Yamakawa, Takeshi; Onoda, Shinobu; Wakasa, Takeshi; Laird, J. S.; Hirao, Toshio; Kamiya, Tomihiro; Ito, Hisayoshi; et al.
Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.177 - 180, 2004/10
no abstracts in English
Hirao, Toshio; Laird, J. S.; Onoda, Shinobu; Shibata, Toshihiko*; Wakasa, Takeshi; Yamakawa, Takeshi; Abe, Hiroshi; Takahashi, Yoshihiro*; Onishi, Kazunori*; Ito, Hisayoshi
Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.105 - 109, 2004/10
no abstracts in English
Hirao, Toshio; Laird, J. S.; Mori, Hidenobu; Onoda, Shinobu; Ito, Hisayoshi
Proceedings of 6th European Conference on Radiation and its Effects on Components and System (RADECS 2001) (CD-ROM), 5 Pages, 2002/00
no abstracts in English
Kamiya, Tomihiro; Sakai, Takuro; Hirao, Toshio; Oikawa, Masakazu*
Nuclear Instruments and Methods in Physics Research B, 181(1-4), p.280 - 285, 2001/07
Times Cited Count:2 Percentile:21.04(Instruments & Instrumentation)no abstracts in English
; *; *; *
Mater.Res.Soc.Symp.Proc., 16, p.233 - 236, 1983/00
no abstracts in English
*; ;
JAERI-M 8478, 133 Pages, 1979/10
no abstracts in English